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| Shantou Huashan Electronic Devices Co.,Ltd. HFP740 N-Channel Enhancement Mode Field Effect Transistor General Description This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast. TO-220 1- G 2-D 3-S Features * 10A, 400V, RDS(on) <0.55@VGS = 10 V * Fast switching * 100% avalanche tested * Improved dv/dt capability * Equivalent Type:IRF740 Maximum RatingsTa=25 unless otherwise specified T stg ----Storage Temperature ------------------------------------------------------ -55~150 T j ----Operating Junction Temperature -------------------------------------------------- 150 V DSS ---- Drain-Source Voltage ----------------------------------------------------------400V VDGR ---- Drain-Gate Voltage (RGS=20k) ------------------------------------------------------------ 400V VGSS ---- Gate-Source Voltage -------------------------------------------------------------------------- 20V ID ---- Drain Current (Continuous) --------------------------------------------------------------------- 10A PD ---- Maximum Power Dissipation --------------------------------------------------------------- 125W IAR ---- Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, d < 1%) ------------------------------------------------------ 10 A EAS---- Single Pulse Avalanche Energy (starting Tj = 25, ID = IAR, VDD = 50 V) --------------------------------------------------- 450 mJ EAR---- Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 13.4mJ Thermal Characteristics Symbol Rthj-case Rthj-amb Rth c-s Items Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink TO-220 Max 1.0 Max 62.5 Typ 0.5 Unit /W /W /W Shantou Huashan Electronic Devices Co.,Ltd. HFP740 Electrical CharacteristicsTa=25 unless otherwise specified Symbol Off Characteristics BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage 2.0 9.6 1800 195 45 50 170 260 180 53 7 17 10 40 2.0 400 25 250 V A A nA V ID=250A ,VGS=0V VDS =400V, VGS=0V VDS =320V, VGS=0V,Tj=125 VGS= 20V , VDS =0V VDS = VGS , ID=250A VGS=10V, ID=5A VDS=40V, ID=5A (Note 1) Items Min. Typ. Max. Unit Conditions 100 4.0 0.55 On Characteristics Gate Threshold Voltage VGS(th) RDS(on) gFS Ciss Coss Crss Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Rise Time Turn - Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge S pF pF pF nS nS nS nS nC nC nC A A V Dynamic Characteristics and Switching Characteristics VDS = 25 V, VGS = 0V, f = 1.0 MHz td(on) tr td(off) tf Qg Qgs Qgd VDD = 200 V, ID = 10Apk RG= 25 (Note 1,2) VDS=0.8VDSS, ID=10A, VGS = 10 V (Note 1,2) Drain-Source Diode Characteristics and Maximun Ratings Continuous Source-Drain Diode IS Forward Current Pulsed Drain-Source Diode ISM Forward Current Source-Drain Diode Forward VSD On-Voltage Notes: 1. Pulse Test: Pulse width300S,Duty cycle2% 2. Essentially independent of operating temperature IS=10A,VGS=0 Shantou Huashan Electronic Devices Co.,Ltd. Typical Characteristics HFP740 Shantou Huashan Electronic Devices Co.,Ltd. HFP740 Typical Characteristics Shantou Huashan Electronic Devices Co.,Ltd. Typical Characteristics HFP740 Shantou Huashan Electronic Devices Co.,Ltd. Typical Characteristics HFP740 |
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